JPH02140863U - - Google Patents
Info
- Publication number
- JPH02140863U JPH02140863U JP1989049014U JP4901489U JPH02140863U JP H02140863 U JPH02140863 U JP H02140863U JP 1989049014 U JP1989049014 U JP 1989049014U JP 4901489 U JP4901489 U JP 4901489U JP H02140863 U JPH02140863 U JP H02140863U
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- groove
- stepped
- side wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6728—Vertical TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
Landscapes
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989049014U JPH02140863U (en]) | 1989-04-26 | 1989-04-26 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989049014U JPH02140863U (en]) | 1989-04-26 | 1989-04-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02140863U true JPH02140863U (en]) | 1990-11-26 |
Family
ID=31566338
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989049014U Pending JPH02140863U (en]) | 1989-04-26 | 1989-04-26 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02140863U (en]) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011106165A1 (en) * | 2010-02-26 | 2011-09-01 | Eastman Kodak Company | Vertical transistor including reentrant profile |
| WO2011106337A1 (en) * | 2010-02-26 | 2011-09-01 | Eastman Kodak Company | Methods of making transistor including reentrant profile |
| WO2012094109A1 (en) * | 2011-01-07 | 2012-07-12 | Eastman Kodak Company | Transistor including reduced channel length |
| WO2012094353A1 (en) * | 2011-01-07 | 2012-07-12 | Eastman Kodak Company | Transistor including multi-layer reentrant profile |
| WO2012094357A3 (en) * | 2011-01-07 | 2012-09-07 | Eastman Kodak Company | Transistor including multiple reentrant profiles |
| WO2013126261A1 (en) * | 2012-02-22 | 2013-08-29 | Eastman Kodak Company | Circuit including vertical transistors |
| WO2014204884A1 (en) * | 2013-06-19 | 2014-12-24 | Eastman Kodak Company | Four terminal transistor |
| WO2015134082A1 (en) * | 2014-03-06 | 2015-09-11 | Eastman Kodak Company | Vtft with polymer core |
| WO2016200626A1 (en) * | 2015-06-12 | 2016-12-15 | Eastman Kodak Company | Vertical and planar tfts on common substrate |
| EP3657550A3 (en) * | 2018-11-20 | 2020-08-12 | LG Display Co., Ltd. | Transistor having vertical structure and electric device comprising the same |
-
1989
- 1989-04-26 JP JP1989049014U patent/JPH02140863U/ja active Pending
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9337828B2 (en) | 2010-02-26 | 2016-05-10 | Eastman Kodak Company | Transistor including reentrant profile |
| WO2011106337A1 (en) * | 2010-02-26 | 2011-09-01 | Eastman Kodak Company | Methods of making transistor including reentrant profile |
| CN102782821A (zh) * | 2010-02-26 | 2012-11-14 | 伊斯曼柯达公司 | 包括凹进轮廓的垂直晶体管 |
| JP2013520844A (ja) * | 2010-02-26 | 2013-06-06 | イーストマン コダック カンパニー | 内側にへこんだ形状を含んだトランジスタを製造する方法 |
| JP2013520839A (ja) * | 2010-02-26 | 2013-06-06 | イーストマン コダック カンパニー | 内側にへこんだ形状を含んだ縦型トランジスタ |
| WO2011106165A1 (en) * | 2010-02-26 | 2011-09-01 | Eastman Kodak Company | Vertical transistor including reentrant profile |
| US8803203B2 (en) | 2010-02-26 | 2014-08-12 | Eastman Kodak Company | Transistor including reentrant profile |
| WO2012094109A1 (en) * | 2011-01-07 | 2012-07-12 | Eastman Kodak Company | Transistor including reduced channel length |
| WO2012094353A1 (en) * | 2011-01-07 | 2012-07-12 | Eastman Kodak Company | Transistor including multi-layer reentrant profile |
| WO2012094357A3 (en) * | 2011-01-07 | 2012-09-07 | Eastman Kodak Company | Transistor including multiple reentrant profiles |
| CN103314445A (zh) * | 2011-01-07 | 2013-09-18 | 柯达公司 | 包含多重凹入外形的晶体管 |
| WO2013126261A1 (en) * | 2012-02-22 | 2013-08-29 | Eastman Kodak Company | Circuit including vertical transistors |
| WO2014204884A1 (en) * | 2013-06-19 | 2014-12-24 | Eastman Kodak Company | Four terminal transistor |
| WO2015134082A1 (en) * | 2014-03-06 | 2015-09-11 | Eastman Kodak Company | Vtft with polymer core |
| WO2016200626A1 (en) * | 2015-06-12 | 2016-12-15 | Eastman Kodak Company | Vertical and planar tfts on common substrate |
| EP3657550A3 (en) * | 2018-11-20 | 2020-08-12 | LG Display Co., Ltd. | Transistor having vertical structure and electric device comprising the same |
| US11177390B2 (en) | 2018-11-20 | 2021-11-16 | Lg Display Co., Ltd. | Transistor having vertical structure and electric device |
| US11777037B2 (en) | 2018-11-20 | 2023-10-03 | Lg Display Co., Ltd. | Transistor having vertical structure and electric device |